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| "SUPER SOT" SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 - AUGUST 1997 FEATURES * 625mW POWER DISSIPATION * Very High hFE at High Current (5A) * Extremely Low VCE(sat) at High Current (1A) COMPLEMENTARY TYPE - FMMT634 PARTMARKING DETAIL - 734 FMMT734 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE -100 -100 -12 -5 -800 625 -55 to +150 SOT23 UNIT V V V A mA mW C * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FMMT734 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. -100 TYP. -130 MAX. UNIT CONDITIONS. V I C=-100A I C=-5mA* Collector-Base V (BR)CBO Breakdown Voltage Collector-Emitter V (BR)CEO Breakdown Voltage Emitter-Base V (BR)EBO Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage I CBO -100 -116 V -12 -17 V I E=-100A V CB=-80V -10 nA I EBO -10 nA V EB=-7V I CES -200 nA V CES =-80V V CE(sat) -0.68 -0.72 -0.78 -0.86 -0.72 -0.90 -1.60 -0.75 -0.80 -0.86 -0.97 -- -1.05 -1.75 V V V V V V V I C=-100mA, I B=-1mA* I C=-250mA,I B=-1mA* I C=-500mA, I B=-5mA* I C=-800mA, I B=-5mA* I C=-800mA, I B=-5mA * I C=-1A, I B=-5mA* I C=-1A, I B=-5mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) -1.30 -1.75 V I C =-1A, V CE=-5V* h FE 20K 15K 5K 60K 60K 50K 15K 150 20K 140 MHz I C=-10mA, V CE=-5V* I C=-100mA, V CE=-5V* I C=-1A, V CE=-5V* I C=-2A, V CE=-5V* I C=-5A, V CE=-5V* I C=-1A, V CE=-2V* I C=-10mA, V CE=-10V f=100MHz V CB=-10V, f=1MHz I C=-500mA, V CC=-20V I B=1mA Transition Frequency fT Output Capacitance C obo Turn-On Time Turn-Off Time t (on) t (off) 14 460 1200 25 pF ns ns *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Tamb=150C FMMT734 TYPICAL CHARACTERISTICS 1.6 +25C 1.6 IC/IB=500 1.2 VCE(sat) -(V) VCE(sat) -(V) 0.8 IC/IB=100 IC/IB=500 IC/IB=1000 IC/IB=5000 1.2 -55C +25C +100C 0.8 0.4 0.4 0 1mA 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 150K VCE=5V +100C 2.0 1.6 IC/IB=500 hFE - Typical Gain 100K VBE(sat) - (V) 1.2 0.8 0.4 0 +25C 50K -55C +25C +100C -55C 0 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 2.0 1.6 VCE=5V 10 IC-Collector Current (A) 1 VBE(on) - (V) 1.2 0.8 0.4 0 1mA 10mA 100mA 1A 10A -55C +25C +100C 0.1 0.01 DC 1s 100ms 10ms 1ms 100us 0.001 0.1V 1V 10V 100V IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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